240723-K3-1

Type: Synthesis

ObjectId: 86464

Created: 7/23/2024 10:09:26 AM by Marx Patrick [patrick.marx-l69@rub.de]

Updated: 9/16/2026 4:27:19 PM by Dudarev Victor gmail [vic.dudarev@gmail.com]

Access: Public Sort Code (asc): 0

License: CC BY 4.0

Description:

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Referenced Objects (Reverse Association)

  • 10474 240723-K3-1
    Sample

    Deposition for rate at RT on crosses wafer; Co: DC-750, 70W; Mn: pulsed DC, 100W, 10kHz, 5µs, 20W/min ramp

All properties (except table)

Include all template properties
Type Name Value Comment
general process parameters
String chamber K3 K<i> (for example, "K7")
Float start vacuum 7.4e-008 Torr
Float process duration 7200 s
Float substrate temperature 25 °C
Float substrate rotation 0 RPM
String process gas Ar
String reactive gas 1 O2
Float flow RG 1 40 sccm
Float table height 25 mm
Float substrate position 180 °
Float process pressure 3 mTorr
Float flow PG 80 sccm
target source configuration
Cathode 1
String target material Co
String target ID #10
Mag1-DC
Float ignition power cathode 1 100 W
Float pre clean power 1 70 W
Float pre clean time 1 300 s
String pre clean pressure cathode 1 20 mTorr
Float power cathode 1 70 W
Float voltage cathode 1 314 V
Float current cathode 1 0.22 A
Cathode 3
String target material Mn
String target ID #3
Mag3-Pulsed DC
Float ignition power cathode 3 100 W
Float ramp power step cathode 3 20 W
Float duration per step cathode 3 60 s
Float pre clean power 3 100 W
Float pre clean time 3 300 s
Float pre clean pressure cathode 3 20 mTorr
Float power cathode 3 100 W
Float voltage cathode 3 314 V
Float current cathode 3 320 A
Float frequency cathode 3 10000 Hz
Float pulse length cathode 3 5 µs
Float duty cycle cathode 3 -1 %

The table

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