250417-K3-1

Type: Synthesis

ObjectId: 125733

Created: 4/17/2025 10:55:37 AM by Marx Patrick [patrick.marx-l69@rub.de]

Updated: 9/16/2026 4:27:19 PM by Dudarev Victor gmail [vic.dudarev@gmail.com]

Access: Public Sort Code (asc): 0

License: CC BY 4.0

Description:

[no file attached]

Associated Objects

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Referenced Objects (Reverse Association)

  • 10901 250417-K3-1
    Sample

    Co-O hot dep 500°C on SiSiO2 with Pt-electrode layer (50nm Pt on 10nm Ta, 240801-K7-1), Co: 100W DC, 107 min, 1h preanneal, deposition on 22.04.2025

All properties (except table)

Include all template properties
Type Name Value Comment
general process parameters
String chamber K3 K<i> (for example, "K7")
String operator Patrick Marx
Float start vacuum 1.3e-007 Torr
Float process duration 6420 s
Float substrate temperature 500 °C
Float substrate rotation 30 RPM
String process gas Ar
String reactive gas 1 O2
Float flow RG 1 20 sccm
Float table height 25 mm
Float process pressure 3 mTorr
Float flow PG 40 sccm
Float preheat duration 60 min
target source configuration
Cathode 3
String target material Co
String target ID #10
Mag3-DC
Float ignition power cathode 3 70 W
Float pre clean power 3 70 W
Float pre clean time 3 300 s
Float pre clean pressure cathode 3 20 mTorr
Float power cathode 3 100 W
Float set power cathode 3 101 W
Float act power cathode 3 100 W
Float voltage cathode 3 379 V
Float current cathode 3 0.265 A

The table

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